symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 16.7 25 40 50 r q jc 2 3 c 50 25 -55 to 175 w 2.5 1.6 continuous drain current b,h maximum units parameter t c =25c t c =100c -40 absolute maximum ratings t a =25c unless otherwise noted v t a =70c power dissipation b avalanche current c repetitive avalanche energy l=0.1mh c a mj i d pulsed drain current c -12 -12 -30 -20 20 v 20 gate-source voltage drain-source voltage steady-state t a =25c p dsm t c =25c maximum junction-to-ambient a,g steady-state power dissipation a junction and storage temperature range p d t c =100c c/w thermal characteristics parameter units maximum junction-to-ambient a,g t 10s r q ja c/w c/w maximum junction-to-case f features v ds (v) = -40v i d = -12a (v gs = -10v) r ds(on) < 44m w (v gs = -10v) r ds(on) < 66m w (v gs = -4.5v) 100% uis tested 100% rg tested general description the AOD413A uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. with the excellent thermal resistance of th e dpak package, this device is well suited for high current load applications. g d s to252 dpak top view bottom view g s d g s d AOD413A 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -2 -3 v i d(on) -30 a 36 44 t j =125c 52 65 52 66 g fs 22 s v sd -0.76 -1 v i s -12 a c iss 900 1125 pf c oss 97 pf c rss 68 pf r g 14 w q g (-10v) 16.2 21 nc q g (-4.5v) 7.2 9.4 nc q gs 3.8 nc q gd 3.5 nc t d(on) 6.2 ns t r 8.4 ns t d(off) 44.8 ns t f 41.2 ns t rr 21.2 ns q rr 13.8 nc -20 components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 20 gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs = -10v, v ds = -20v, i d = -12a total gate charge m w turn-on rise time turn-off delaytime v gs = -10v, v ds = -20v, r l =1.6 w , r gen =3 w turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds = -20v, f=1mhz switching parameters total gate charge v gs = -4.5v, i d = -8a i s = -1a,v gs =0v v ds = -5v, i d = -12a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a body diode reverse recovery charge i f = -12a, di/dt=100a/ m s body diode reverse recovery time v gs = -10v, i d = -12a reverse transfer capacitance i f = -12a, di/dt=100a/ m s gate threshold voltage v ds =v gs i d = -250 m a drain-source breakdown voltage on state drain current i d = -250 m a, v gs =0v v gs = -10v, v ds = -5v v ds = -40v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current a: the value of r ja is measured with the device in a still air enviro nment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using t 10s junction-to-ambient thermal resistance. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse ratin g. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. h. the maximum current rating is limited by bond-w ires. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev4: april 2011 AOD413A 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics -20 20 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) -3.5v -10v -4.0v vgs= -2.5v -4.5v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 35 40 45 50 55 60 65 70 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -30 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs = -10v i d = -12a v gs = -4.5v i d = -8a 20 40 60 80 100 120 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) v ds = -5v v gs = -4.5v v gs = -10v i d = -12a 25c 125c 25c 125c AOD413A 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics -20 20 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c v ds = -20v i d = -12a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s AOD413A 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
150 -20 20 typical electrical and thermal characteristics 0 5 10 15 20 0 25 50 75 100 125 150 175 t case (c) figure 13: current de-rating (note b) -current rating i d (a) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50c/w single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 12: power de-rating (note b) power dissipation (w) AOD413A 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AOD413A 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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